Amorphization processes in electron and/or ion-irradiated silicon
نویسندگان
چکیده
منابع مشابه
Mpnte Carlo Simulation of Silicon Amorphization During Ion Implantation
When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. I t is believed that the lateral diffusion o...
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2014 We have studied through capacitance techniques (TSCAP and DLTS) the variation of the introduction rate of defects with the energy of the electrons in n-type silicon irradiated at room temperature. The results obtained provide a direct confirmation of the identification of the observed defects which was proposed in the literature : the Ec 0.39 and Ec 0.23 eV levels, attributed to the divaca...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1987
ISSN: 0031-9007
DOI: 10.1103/physrevlett.58.900